Factory Lead Time  

12 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

43A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

3.8W Ta 200W Tc

Turn Off Delay Time  

71 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Published  

1998

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

Termination  

SMD/SMT

ECCN Code  

EAR99

Resistance  

4.2MOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY

Voltage - Rated DC  

150V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Current Rating  

43A

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

3.8W

Case Connection  

DRAIN

Turn On Delay Time  

12 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

42m Ω @ 22A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2400pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

200nC @ 10V

Rise Time  

55ns

Vgs (Max)  

±20V

Fall Time (Typ)  

69 ns

Continuous Drain Current (ID)  

43A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

150V

Dual Supply Voltage  

150V

Avalanche Energy Rating (Eas)  

590 mJ

Recovery Time  

390 ns

Nominal Vgs  

4 V

Height  

4.826mm

Length  

10.668mm

Width  

9.65mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Contains Lead, Lead Free